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Design of THz sources in CMOS and BiCMOS advanced technologies

Technological challenge: Communication networks, IOT, radiofrequencies and antennas (learn more)

Department: Département Systèmes (LETI)

Laboratory: Laboratoire Architectures Intégrées Radiofréquences

Start Date: 01-09-2022

Location: Grenoble

CEA Code: SL-DRT-22-0638

Contact: alexandre.siligaris@cea.fr

Within the frame of our research activity on circuit design for (high frequency) high speed wireless communication systems, we aim to explore sub-millimeter wave frequency bands. Based on a strong background in mmW and RF IC up to Gbps, as well as circuits for sub-THz imaging, we want to investigate further architectures that enable to achieve strong emission power sources around 300GHz. Indeed, CMOS imagers in the 300 GHz band are plethore, but there is a lack of "sources of light" which would allow to "enlighten" objects and hence increase image dynamics. A transistor-level approach will be adopted by the future PhD student in order to explore optimum architectures for generating power beyond 300 GHz. Architectures appealing to the synchronization and recombination of several oscillators will also be studied in order to increase the power of the emitted signal. While keeping in mind the primary objective of this research which is the generated signal radiation, we will also pay attention to the interface of the IC with the antenna system. Finally, designed THz circuits with sub-hamronic locking ability will be looked at, which will enable to envision frequency syntheses for telecommunications and/or FMCW-type radars. This work will be carried out on advanced CMOS and BiCMOS technological platforms (ex. CMOS 45 nm SOI, B55x...). In this PhD the candidate will explore various circuit level architectures in order to fabricate THz sources. The aim is to pave the way with new building blocks that are suitable for high output power beyond 300 GHz operating frequency in Silicon technologies. Moreover, the explored architectures must have the flexibility to lock using a sub-harmonic injection signal in order to be used in the framework of frequency synthesizers beyond 300 GHz.

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