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ALD-based ferroelectric materials for emerging non volatile memories

Technological challenge: Emerging materials and processes for nanotechnologies and microelectronics (learn more)

Department: Département des Plateformes Technologiques (LETI)

Laboratory: Laboratoire

Start Date: 01-09-2022

Location: Grenoble

CEA Code: SL-DRT-22-0591

Contact: messaoud.bedjaoui@cea.fr

CEA-LETI is a major player in the field of ultra-low consumption FeRAM memories for IoT and IA applications. The introduction of HfO2-based ultrathin ferroelectric layers with several dopants (Si, Zr, Al, allowing stabilization of the orthorhombic, ferroelectric phase) is fundamental for the optimization of the desired performances. The objective of this thesis work is to develop ultra-thin ferroelectric layers by ALD (Atomic Layer Deposition) for the MFM (Metal Ferroelectric Metal) capacities of non-volatile memories integrated in the 22nm node. This subject aims to cover both the development and implementation of innovative ferroelectric materials by ALD, the integration and production of FeRAM components as well as the test/reliability protocols. In practice, one of the tasks will be to evaluate the impact of MFM stack production parameters (ALD process, nature of the electrodes, post-annealing) on the crystalline phases at the origin of the ferroelectricity of HfO2-based ultrathin layers (<10nm). This will require the establishment of a methodology for the morphological/electrical characterization of the MFM stacks. The other axis of this work will be the integration and validation of BEOL compatible MFM capacities (post annealing temperature <450 ° C) using 200mm/300mm 16kbit FeRAM test vehicles (electrical functionality <1.5V; endurance> 10e14 cycles and error rate <1ppm).

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