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Architecture of vertical GaN power devices by epitaxy on foreign substrates

Technological challenge: Emerging materials and processes for nanotechnologies and microelectronics (learn more)

Department: Département des Plateformes Technologiques (LETI)

Laboratory: Laboratoire des Matériaux pour la photonique

Start Date: 01-10-2022

Location: Grenoble

CEA Code: SL-DRT-22-0589

Contact: matthew.charles@cea.fr

Gallium Nitride- (GaN-) based power devices are having an increasing success due to their electrical characteristics that allow to improve the efficiency and reduce the size of power converters. Vertical GaN devices have a reduced chip size with respect to lateral devices (e.g. HEMTs) but are typically very expensive due to the cost of GaN substrates. Growth of GaN on silicon could allow to reduce their cost, but requires to revisit their architecture. The work of this PhD will start by performing TCAD simulations of vertical GaN devices in order to optimize their architecture on silicon substrates by taking into account the specifics of the layers such as the insulating buffer. The topic will adress device specification, maskset design and technological process flow definition. This will be followed by the monitoring of their fabrication in clean room. Electrical measurements will be performed at the end of the process and compared with simulations in an iterative manner. The studies that will be performed will allow to write scientific publications and the proposed innovations will be considered for patents.

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