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Advanced carrier recombination characterization for AlGaN/GaN HEMT, stack understanding from epitaxy to etching

Technological challenge: Advanced nano characterization (learn more)

Department: Département Composants Silicium (LETI)

Laboratory: Laboratoire des composants de Puissance à Semiconducteur

Start Date: 01-09-2022

Location: Grenoble

CEA Code: SL-DRT-22-0502

Contact: Lukasz.Borowik@cea.fr

To penetrate into the power electronics market, the main challenges for GaN remains the development of a reliable normally-off HEMT solution. CEA-LETI has chosen to develop recessed hybrid MISHEMT, fabricating normally-off devices which give functionality similar to a classic silicon based MOS. Since etching of AlGaN/GaN MISHEMT heterostructure can induce defects, it is critical to be able to characterize them in order to optimize gate processing and therefore overall device performance. Work will consist of: (1) CL and KPFM characterization realized and interpreted in term of radiative/non radiative carrier recombination for understanding of integration processes impact. Already optimized during previous internship sample preparation for correlated characterization will be refined for MISHEMT samples. (2) KPFM-CL correlation for a deep understanding of carrier dynamic in the gate stack (3) Correlation with electrical performances of theses devices will be performed. Instrumentation, besoins spécifiques: LETI owns all necessary equipment (CL and KPFM under illumination) for this thesis. Additionally, time-resolved CL is currently in PFNC investment road map and could be an interesting improvement during the third year of this PhD thesis.

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