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DNA based patterning for memories

Technological challenge: Emerging materials and processes for nanotechnologies and microelectronics (learn more)

Department: Département des Plateformes Technologiques (LETI)

Laboratory: Laboratoire

Start Date: 01-01-2022

Location: Grenoble

CEA Code: SL-DRT-22-0576

Contact: guido.rademaker@cea.fr

In nanotechnology in general and semiconductor industry in particular, there is an ever increasing need for smaller and more complex features at an ever lower cost. Some examples of applications are sub-10 nm features for creation of FinFETs, lateral (horizontal) and vertical gate-all around nanowires, single electron transistors and advanced non-volatile memories (STT-RAM, MRAM, OxRAM, etc.). To address the challenge of patterning at sub-10 nm features novel patterning approaches must be envisioned. DNA (deoxyribonucleic acid), by virtue of its inherent small diameter (2 nm), tendency to self-organize into various different morphologies and its possibilities for functionalization, offers the possibility to realize both two- and three dimensional structures at nanometer scale. The goal of this PhD work is to demonstrate the feasibility of nanostructuring the surface of a substrate using DNA origami as a mask, with an ultimate resolution of a few nanometer and with a density that is above the current state of the art in semiconductor industry. The focus of the thesis will lie on ever more complex features, while ensuring long-range order by conventional lithography guide patterns. The targeted demonstrator consists of manufacturing a 2D contact hole pattern for ferro-electric memories using DNA origami self-assembly.

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