Scientific direction Development of key enabling technologies
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PostDocs : selection by topics

Tunnel Junction for UV LEDs: characterization and optimization

Département d'Optronique (LETI)

Laboratoire des Matériaux pour la photonique

01-09-2018

PsD-DRT-18-0047

guy.feuillet@cea.fr

Besides existing UV lamps, UV LEDs emitting in the UV-C region (around 265 nm) are considered as the next solutions for cost efficient water sterilization systems. But existing UV-C LEDs based on AlGaN wide band gap materials and related quantum well heterostructures still have low efficiencies which precludes their widespread use in industrial systems. Analysing the reasons of the low efficiencies of present UV-C LEDs led us to propose a solution based on the use of a Tunnel Junction (TJ) inserted within the AlGaN heterostructure diode. p+/ n+ tunnel junctions are smart solutions to cope with doping related problems in the wide band gap AlGaN materials but give rise to extra tunneling resistances that need to be coped with. The post-doctoral work is dedicated to understanding the physics of tunneling processes in the TJ itself for a better control of the tunneling current. The post-doctoral work will be carried out at the ?Plate-Forme de Nanocaractérization? in CEA/ Grenoble, using different optical, structural and electrical measurements on stand-alone TJs or on TJs inserted within LEDs. The candidate will have to interact strongly with the team in CNRS/CRHEA in Sophia Antipolis where epitaxial growth of the diodes will be undertaken. The work is part of a collaborative project named "DUVET" financed by the Agence Nationale de la Recherche (ANR).

Low temperature process modules for 3d coolcube integration : through the end of roadmap

Département Composants Silicium (LETI)

Laboratoire d'Intégration des Composants pour la Logique

01-03-2019

PsD-DRT-19-0048

claire.fenouillet-beranger@cea.fr

3D sequential integration is envisaged as a possible solution until the end of CMOS roadmap. Different process modules have been developped @ 500°C for planar FDSOI technology in a gate first process. However, regarding bottom transistor level stability in CoolcubeTM integration, and yield consideration, the need to reduce further the top transistor temperature down to 450°C should be explored. The post-doc will have in charge the development of specific technological modules at low temperature both 500°C and 450°C for FDSOI planar devices to acquire a solid knowledge in low temperature CMOS process integration. The specific low temperature gate module will be addressed on planar devices. The threshold voltage modulation will also be studied. The work will be performed in collaboration with the technological platform process of LETI for the low temperature modules development. The electrical characterization in collaboration with the characterization laboratory and the TCAD simulations team of LETI.

AlGaN/GaN HEMTs transfert for enhanced electrical and thermal performances

Département Composants Silicium (LETI)

Laboratoire Intégration et Transfert de Film

01-04-2018

PsD-DRT-18-0060

julie.widiez@cea.fr

Due to their large critical electric field and high electron mobility, gallium nitride (GaN) based devices emerge as credible candidates for power electronic applications. In order to face the large market needs and benefit from available silicon manufacturing facilities, the current trend is to fabricate those devices, such as aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs), directly on (111) silicon substrates. However, this pursuit of economic sustainability negatively affects device performances mainly because of self-heating effect inherent to silicon substrate use. New substrates with better thermal properties than silicon are desirable to improve thermal dissipation and enlarge the operating range at high performance. A Ph.D. student in the lab. has developed a method to replace the original silicon material with copper, starting from AlGaN/GaN HEMTs fabricated on silicon substrates. He has demonstrated the interest of the postponement of a GaN power HEMT on a copper metal base with respect to self heating without degrading the voltage resistance of the component. But there are still many points to study to improve the power components. Post-doc objectives : We propose to understand what is the best integration to eliminate self-heating and increase the voltage resistance of the initial AlGaN/GaN HEMT. The impact of the component transfer on the quality of the 2D gas will be analyzed. The same approach can be made if necessary on RF components. Different stacks will be made by the post-doc and he will be in charge of the electrical and thermal characterizations. Understanding the role of each part of the structure will be critical in choosing the final stack. This process will also be brought in larger dimensions. This post-doc will work if necessary in collaboration with different thesis students on power components.

Development of flexible solar panels for space applications

Département des Technologies Solaires (LITEN)

Laboratoire Photovoltaïque à Concentration

01-04-2018

PsD-DRT-18-0066

philippe.voarino@cea.fr

Traditional solar panels used to power satellites can be bulky with heavy panels folded together using mechanical hinges. Smaller and lighter than traditional solar panels, flexible solar array consists of a flexible material containing photovoltaic cells to convert light into electricity. Being flexible, the solar array could roll or snap using carbon fiber composite booms to deploy solar panels without the aid of motors, making it lighter and less expensive than current solar array designs. On the other hand, satellite trends are shifting away from one-time stints and moving towards more regular use in a constellation setting. In the last years, the desire increased to mass-produce low-weight satellites. Photovoltaic arrays companies are challenged on their capacity to face these new needs in terms of production capacity and versatility. And this is exactly where space photovoltaics can learn from terrestrial photovoltaics where this mass production and low-cost shift occurred years ago. To tackle these new challenges, the Liten institute started to work on these topics two years ago. In the frame of this post-doc, we propose the candidate to work on the development of an innovative flexible solar panel architecture, using high throughput assembly processes. We are looking for a candidate with a strong experience in polymers and polymers processing, along with an experience in mechanics. A previous experience in photovoltaic will be greatly appreciated.

Detection of cyber-attacks in a smart multi-sensor embedded system for soil monitoring

Département Architectures Conception et Logiciels Embarqués (LIST-LETI)

Laboratoire Infrastructure et Ateliers Logiciels pour Puces

01-04-2019

PsD-DRT-19-0071

anca.molnos@cea.fr

The post-doc is concerned with the application of machine learning methods to detect potential cyber-security attacks on a connected multi-sensor system. The application domain is the agriculture, where CEA Leti has several projects, among which the H2020 project SARMENTI (Smart multi-sensor embedded and secure system for soil nutrient and gaseous emission monitoring). The objective of SARMENTI is to develop and validate a secure, low power multisensor systems connected to the cloud to make in situ soil nutrients analysis and to provide decision support to the farmers by monitoring soil fertility in real-time. Within this topic, the postdoc is concerned with the cyber-security analysis to determine main risks in our multi-sensor case and with the investigation of a attack detection module. The underlying detection algorithm will be based on anomaly detection, e.g., one-class classifier. The work has tree parts, implement the probes that monitor selected events, the communication infrastructure that connects the probes with the detector, and the detector itself.

FDSOI technology scaling beyond 10nm node

Département Composants Silicium (LETI)

Laboratoire d'Intégration des Composants pour la Logique

01-11-2018

PsD-DRT-18-0074

claire.fenouillet-beranger@cea.fr

FDSOI (Fully-Depleted Silicon On Insulator) is acknowledged as a promising technology to meet the requirements of emerging mobile, Internet Of Things (IOT), and RF applications for scaled technological nodes [1]. Leti is a pioneer in FDSOI technology, enabling innovative solutions to support industrial partners. Scaling of FDSOI technology beyond 10nm node offers solid perspectives in terms of SoC and RF technologies improvement. Though from a technological point of view, it becomes challenging because of thin channel thickness scaling limitation around 5nm to maintain both good mobility and variability. Thus, introduction of innovative technological boosters such as strain modules, alternative gate process, parasitics optimization, according to design rules and applications, become mandatory [2]. The viability of these new concepts should be validated first by TCAD simulations and then implemented on our 300mm FDSOI platform. This subject is in line with the recent LETI strategy announcement and investments to develop new technological prototypes for innovative technology beyond 28nm [3]. The candidate will be in charge to perform TCAD simulations, to define experiment and to manage them until the electrical characterization. The TCAD simulations will be performed in close collaboration with the TCAD team. The integration will be done in the LETI clean room in collaboration with the process and integration team. Candidate with out-of-the-BOX thinking, autonomy, and ability to work in team is mandatory. [1] 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications, R. Carter et al, IEEE IEDM 2016. [2] UTBB FDSOI scaling enablers for the 10nm node, L. Grenouillet et al, IEEE S3S 2013. [3]https://www.usinenouvelle.com/article/le-leti-investit-120-millions-d-euros-dans-sa-salle-blanche-pour-preparer-les-prochaines-innovations-dans-les-puces.

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