Scientific direction Development of key enabling technologies
Transfer of knowledge to industry

PostDocs : selection by topics

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Ultra Low Power RF Communication Circuit and System Design for Wake-Up Radio

Département Architectures Conception et Logiciels Embarqués (LIST-LETI)

Laboratoire Architectures Intégrées Radiofréquences

01-01-2019

PsD-DRT-19-0026

dominique.morche@cea.fr

Today, there is a strong demand in developing new autonomous Wake-Up radio systems with tunable performances and independent clocking system. The objectives of the proposed contract it to exploit the capacity of CMOS FD-SOI technologies to develop such devices, improving power consumption and RF performance above the state of the art, thanks to the natural low parasitic and tuning capacity through back biasing of the FD-SOI . A particular attention will be paid to the development of a new power efficient, fast settling, frequency synthesis system. The chosen candidate will be involved both in RF system and circuit design, with the support of the experienced RF System & Design team.

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Innovative modeling for technology-design-system co-optimization

Département Composants Silicium (LETI)

Laboratoire de Simulation et Modélisation

01-01-2019

PsD-DRT-19-0028

luca.lucci@cea.fr

The post-DOC will support the device modeling part of a research project investigating new methodologies for system and circuit optimization with the aim of achieving a better integration between the knowledge of the detailed characteristics of a specific technology, the circuit-design methodology and the system architecture. The practical goal is to leverage the existing multi-disciplinary know-how for benchmarking of system and technologies to advance the analysis past the usual PPA, PPAY and PPAC approaches that are commonly deployed in such cases. In more detail, the post-DOC will develop "pre"-spice models for actives and passives which will constitute the basic bricks for the optimization methodology developed in the overall project. Active device modeling will have a starting point in the works of EPFL based on the analytical expression of invariants such has the inversion coefficient.

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Simulation and electrical characterization of an innovative logic/memory CUBE for In-Memory-Computing

Département Composants Silicium (LETI)

Laboratoire d'Intégration des Composants pour la Logique

01-01-2020

PsD-DRT-20-0029

francois.andrieu@cea.fr

For integrated circuits to be able to leverage the future ?data deluge? coming from the cloud and cyber-physical systems, the historical scaling of Complementary-Metal-Oxide-Semiconductor (CMOS) devices is no longer the corner stone. At system-level, computing performance is now strongly power-limited and the main part of this power budget is consumed by data transfers between logic and memory circuit blocks in widespread Von-Neumann design architectures. An emerging computing paradigm solution overcoming this ?memory wall? consists in processing the information in-situ, owing to In-Memory-Computing (IMC). However, today's existing memory technologies are ineffective to In-Memory compute billions of data items. Things will change with the emergence of three key enabling technologies, under development at CEA-LETI: non-volatile resistive memory, new energy-efficient nanowire transistors and 3D-monolithic integration. At LETI, we will leverage the aforementioned emerging technologies towards a functionality-enhanced system with a tight entangling of logic and memory. The post-doc will perform electrical characterizations of CMOS transistors and Resistive RAMs in order to calibrate models and run TCAD/spice simulations to drive the technology developments and enable the circuit designs.

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Electronic properties of van der Waals layered GeSbTe superlattices for innovative resistive interfacial Phase-Change Memories (iPCM)

Département des Plateformes Technologiques (LETI)

Laboratoire

01-02-2020

PsD-DRT-20-0031

pierre.noe@cea.fr

Resistive Phase-Change Memories (PCMs) are the best candidates in order to replace Flash memories, realization of storage class memories (SCMs) as well as neuromorphic applications. Nevertheless, PCMs exhibit certain limits hindering their wide use as non-volatile memory in the next future. The replacement of the bulk GeSbTe PCM by van der Waals layered GeSbTe superlattices in iPCMs (interfacial PCMs)is a very promising solution. Although the superior performance of iPCMs is well established, the origin of the resistive transition mechanism upon application of electric pulses remains unclear. This is mainly due to the lack of a robust description of their structure. Recently, we have been able to give a first description at the atomic scale (P. Kowalczyk et al., Small, 14, 24, 1704514, 2018). However, there is still a lot of work to understand and control the atomic structure regarding the electronic properties in order to finally evidence the physical mechanism behind the resistive transition in iPCMs. In that context, the work of this post-doctorate will consist of supporting the LETI's iPCMs team (material / physics, microelectronic devices, simulations) by performing and manging the analysis of the electronic transport properties of prototypical iPCM systems in thin film layers as well as afetr integration into state of the art memory devices. This will involve the realization and/or participation in electrical measurements (resistivity, Hall, iPCMs memories ...) and nanocharacterization of prototypical iPCMs stacks (XRD, STEM-HAADF, Raman / FTIR ...) on the Nanocharacterization platform of CEA Grenoble (PFNC). All this will then serve as a basis for AIMD simulations of the impact of an electric field on such vdW GeSbTe structures in order to be able for the first time to highlight the origin of the electronic transition in iPCMs devices.

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Nano-optomechanical silicon accelerometer for high performance applications

Département Composants Silicium (LETI)

Laboratoire Composants Micro-Capteurs

01-06-2020

PsD-DRT-20-0035

sebastien.hentz@cea.fr

Inertial sensors (accelerometers and gyrometers) are at the heart of a large number of consumer-and low-cost applications such as smartphones and tablets, but also higher added value, higher-performance applications such as navigation for autonomous vehicles, aeronautics or space. Silicon microsystems (MEMS) are today a very mature technology and several millions are sold each year. However, they are today unable to address high-performance applications. LETI has been pioneering the development of optomechanical sensors "on-chip": light is guided in thin silicon layers in a similar way to photonics techniques. This light interacts with an object in motion such as a mechanical resonator or a seismic mass. This displacement modulates the intensity of the measured light, which allows the determination of the object's acceleration. This technology was developed in the 2000s in fundamental research, and in particular enabled gravitational wave detectors. LETI is developing this technology on-chip at the nanoscale, with displacement sensitivities several orders of magnitude better than electrical transductions. First optomechanical accelerometers were designed and fabricated in LETI's quasi-industrial clean rooms for initial characterization tests. The hired fellow with have to become familiar with these devices, to confirm the first optical results, and then most importantly to assess their performances under acceleration: a test setup will have to be realized for this purpose. She or he will have to provide feedback on the modeling and the design from the measurements in order to ensure the comprehension of all phenomena at play. Finally, the postdoctoral fellow will have to propose new designs aimed at the expected high performances. These devices will be fabricated by the clean room, tested by the fellow and and compared to the expected performance.

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coupling of optomechanical resonators in quantum regime for microwave to Infrared photons conversion

Département Composants Silicium (LETI)

Laboratoire Composants Micro-Capteurs

01-10-2020

PsD-DRT-20-0036

guillaume.jourdan@cea.fr

The most promising quantum computing platforms today are operated at very low temperatures at microwave frequencies, while telecommunication networks capable of preserving information in non-conventional states (superposition, entanglement) use infrared photons in non-cryogenic environments. Current frequency conversion means offer poor conversion efficiencies (10-6), which make them unable to preserve the quantum nature of information. A very high efficiency optical microwave converter (>0.5) is an essential milestone to connect these two frequency domains and create a real network of distributed quantum computers (quantum internet). In this context, this post doc topic aims to develop such a converter by exploiting the multi-scale coupling properties of nanomechanical resonators NEMS. Work is currently underway at Leti to address NEMS resonators in their fundamental state by an optomechanical coupling with microwave resonators. The objective of the post doc is to continue these efforts by integrating a high quality infrared optical cavity. To do this, he will be able to rely on the know-how put in place at Leti: the laboratory is one of the pioneers in the development of on-chip optomechanical transduction sensors that guide light in silicon and make it interact with a moving object such as a mechanical resonator. A collaboration is in place with the Néel Institute (CNRS) in Grenoble to characterize and study these devices at ultra-low temperature (<100 mK). The post-doctoral fellow will have to propose designs that can target the expected high levels of efficiency. The devices will be manufactured in Leti's clean room and must be compatible with industrial manufacturing scale-up (VLSI), then tested and compared to expected performance. It will then be necessary to review the modelling and design based on the measurements in order to ensure that all phenomena are understood.

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