Scientific direction Development of key enabling technologies
Transfer of knowledge to industry

PostDocs : selection by topics

See all positions

Simulation and electrical characterization of an innovative logic/memory CUBE for In-Memory-Computing

Département Composants Silicium (LETI)

Laboratoire d'Intégration des Composants pour la Logique

01-01-2020

PsD-DRT-20-0029

francois.andrieu@cea.fr

For integrated circuits to be able to leverage the future ?data deluge? coming from the cloud and cyber-physical systems, the historical scaling of Complementary-Metal-Oxide-Semiconductor (CMOS) devices is no longer the corner stone. At system-level, computing performance is now strongly power-limited and the main part of this power budget is consumed by data transfers between logic and memory circuit blocks in widespread Von-Neumann design architectures. An emerging computing paradigm solution overcoming this ?memory wall? consists in processing the information in-situ, owing to In-Memory-Computing (IMC). However, today's existing memory technologies are ineffective to In-Memory compute billions of data items. Things will change with the emergence of three key enabling technologies, under development at CEA-LETI: non-volatile resistive memory, new energy-efficient nanowire transistors and 3D-monolithic integration. At LETI, we will leverage the aforementioned emerging technologies towards a functionality-enhanced system with a tight entangling of logic and memory. The post-doc will perform electrical characterizations of CMOS transistors and Resistive RAMs in order to calibrate models and run TCAD/spice simulations to drive the technology developments and enable the circuit designs.

Download the offer (.zip)

Developement of relaxed pseudo-substrate based on InGaN porosified by electrochemical anodisation

Département des Plateformes Technologiques (LETI)

Laboratoire des Matériaux pour la photonique

01-03-2021

PsD-DRT-21-0035

carole.pernel@cea.fr

As part of the Carnot PIRLE project starting in early 2021, we are looking for a candidate for a post-doctoral position of 24 months (12 months renewable) with a specialty in material science. The project consists in developing a relaxed pseudo-substrate based on III-N materials for µLEDs applications, especially for emission in red wavelength. The work will focus on developing an InGaN-based epitaxy MOCVD growth process, on an innovative substrate based on electrochemically anodized and relaxed materials. He (She) will have characterize both the level of relaxation of the re-epitaxied layer and its crystalline quality. These two points will promote the epitaxial regrowth of an effective red LED. The candidate will be part of the team, working on the PIRLE project, will be associated to the work on red LED growth and its optical and electro-optical characterizations.

Download the offer (.zip)

Development of a modular multi-detector instrumentation for the measurement of atomic and nuclear parameters

Département Métrologie Instrumentation et Information (LIST)

Laboratoire de Métrologie de l'Activité

01-04-2020

PsD-DRT-21-0039

benoit.sabot@cea.fr

The LNE PLATINUM project (PLATFORM OF MODULAR NUMERICAL INSTRUMENTATION) aims to develop a modular platform, in order to test new instrumentation using two or more detectors in coincidence. The principle implemented in this project is based on the simultaneous detection of interactions taking place in two different detectors, by collecting information on the type of particle and its energy (spectroscopy). This principle is the basis for absolute measurements of activity or active continuous background reduction systems to improve detection limits. But it also allows the measurement of parameters characterizing the decay scheme, such as internal conversion coefficients, X-ray fluorescence yields or angular correlations between photons emitted in cascade. Thanks to its expertise in atomic and nuclear data, the LNHB has noted for many years the incompleteness of decay schemes for certain radionuclides. These schemes, established at the time of evaluation from existing measured data, sometimes present inconsistencies or poorly known transitions, in particular in the presence of highly converted gamma transitions or very low intensity (for example, recent studies on 103Pa, 129I and 147Nd have revealed such inconsistencies). It therefore appears important for LNHB to better master the technique of coincidence measurement, taking advantage of the new possibilities in terms of data acquisition and time stamping to provide additional information on decay scheme and contribute to their improvement.

Download the offer (.zip)

Modeling of trapping and vertical leakage effects in GaN epitaxial substrates on Si

Département Composants Silicium (LETI)

Laboratoire de Simulation et Modélisation

PsD-DRT-20-0043

marie-anne.jaud@cea.fr

State of the art: Understanding and modeling vertical leakage currents and trapping effects in GaN substrates on Si are among the crucial subjects of studies aimed at improving the properties of GaN power components : current collapse and Vth instabilities reductions, reduction of the leakage current in the OFF state. Many universities [Longobardi et al. ISPSD 2017 / Uren et al. IEEE TED 2018 / Lu et al. IEEE TED 2018] and industrials [Moens et al. ISPSD 2017] are trying to model vertical leakages but until now, no clear mechanism has emerged from this work to model them correctly over the entire range of voltage and temperatures targeted. In addition, modeling the effects of traps in the epitaxy is necessary for the establishment of a a robust and predictive TCAD model of device. For LETI, the strategic interest of such a work is twofold: 1) Understanding and reducing the effects of traps in the epitaxy impacting the functioning of GaN devices on Si (current collapse, Vth instabilities?) 2) Reaching the leakage specifications @ 650V necessary for industrial applications. The candidate will have to take charge in parallel of the electrical characterizations and the development of TCAD models: A) Advanced electrical characterizations (I (V), I (t), substrate ramping, C (V)) as a function of temperature and illumination on epitaxial substrates or directly on finite components (HEMT, Diodes, TLM ) B) Establishment of a robust TCAD model integrating the different layers of the epitaxy in order to understand the effects of device instabilities (dynamic Vth, dynamic Ron, BTI) C) Modeling of vertical conduction in epitaxy with the aim of reducing leakage currents at 650V Finally, the candidate must be proactive in improving the different parts of the substrate

Download the offer (.zip)

Digital circuit design for In-Memory Computing in advanced Resistive-RAM NVM technology

Département Composants Silicium (LETI)

Laboratoire d'Intégration des Composants pour la Logique

01-02-2021

PsD-DRT-21-0049

francois.andrieu@cea.fr

For integrated circuits to be able to leverage the future ?data deluge? coming from the cloud and cyber-physical systems, the historical scaling of Complementary-Metal-Oxide-Semiconductor (CMOS) devices is no longer the corner stone. At system-level, computing performance is now strongly power-limited and the main part of this power budget is consumed by data transfers between logic and memory circuit blocks in widespread Von-Neumann design architectures. An emerging computing paradigm solution overcoming this ?memory wall? consists in processing the information in-situ, owing to In-Memory-Computing (IMC). CEA-Leti launched a project on this topic, leveraging three key enabling technologies, under development at CEA-Leti: non-volatile resistive memory (RRAM), new energy-efficient nanowire transistors and 3D-monolithic integration [ArXiv 2012.00061]. A 3D In-Memory-Computing accelerator circuit will be designed, manufactured and measured, targeting a 20x reduction in (Energy x Delay) Product vs. Von-Neumann systems.

Download the offer (.zip)

Numerical Meta-modelization based study of the propagation of ultrasonic waves in piping system with corroded area

Département Imagerie Simulation pour le Contrôle (LIST)

Laboratoire Simulation et Modélisation en Acoustique

01-05-2020

PsD-DRT-20-0055

vahan.baronian@cea.fr

The aim of the ANR project PYRAMID (http://www.agence-nationale-recherche.fr/Projet-ANR-17-CE08-0046) is to develop some technics of detection and quantification of the wall thinning due to flow accelerated corrosion in piping system. In the framework of this project involving French and Japanese laboratories, CEA LIST develops new numerical tools based on finite elements dedicated to the modelling of an ultrasonic guided wave diffracted by the corrosion in an elbow pipe. These solutions support the design of an inspection process based on electromagnetic-acoustic transduction (EMAT). To this end, the ability of CEA LIST to adapt meta-modeling tools of its physical models will be the key asset to allow intensive use of the simulation.

Download the offer (.zip)

33 Results found (Page 2 of 6)
first   previous  1 - 2 - 3 - 4 - 5  next   last

See all positions