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PhD : selection by topics

Technological challenges >> Advanced nano characterization
3 proposition(s).

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Characterization of all-solid-state batteries using neutron and synchrotron facilities

Département de l'Electricité et de l'Hydrogène pour les Transports (LITEN)

Laboratoire Matériaux

01-10-2019

SL-DRT-20-0317

lionel.picard@cea.fr

Advanced nano characterization (.pdf)

In view to increasing both energy density and safety of lithium batteries, all solid state battery systems are currently of interest, either based on the use of polymer or inorganic electrolyte materials, or the combination of them as hybrid electrolytes. Research activities in this field are already well established at CEA-Grenoble, such as the developments of ionic conductive ceramic materials and single-ion conductive polymers. In this frame, the PhD student will aim at supporting this work through better understanding of the hybrid electrolyte system. The objectives of the PhD student will be the in depth characterisation of the structure and properties of such systems, including local/nanoscale organisation, organic-inorganic interfaces and electrolyte-electrode interfaces. The studies will use materials already available at CEA and novel cathodes from UMICORE, as well as new material under development. The student will employ cutting-edge neutron and synchrotron techniques, such as small angle scattering, tomography, micro-beam and imaging techniques, to characterise the hybrid materials both ex situ and operando in devices and propose potential optimisation to the systems.

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Fine chemical nanocaractisation of GaN structures for nano and opto-electronic applications

Département des Plateformes Technologiques (LETI)

Autre laboratoire

01-10-2020

SL-DRT-20-0701

marc.veillerot@cea.fr

Advanced nano characterization (.pdf)

The use of III-N materials is widespread, not only for the electronic power components but also for new low consumption lighting technologies based on µLEDs. However, a better control of the material properties (composition & doping) as well as the quality of critical interfaces is necessary to increase the electrical performance of the components. XPS and SIMS chemical characterization techniques are already being used to help improving these structures. However, both of these techniques need to be developed and combined to produce the reliable information needed to optimize materials and fabrication processes for GaN-based devices. This PhD subject is built on two lines of work. The first, of immediate industrial interest, is the fine combined characterization of surfaces and interfaces for thin planar stacks (a few nm) of AlGaN / GaN and oxide / GaN type. The development of specific methodologies is required such as low energy SIMS for high depth resolution and high energy XPS for analysing buried interfaces. The second, more prospective, is the characterization of three-dimensional structures integrated into the final devices of micron size. For this purpose, we will focus on variants of XPS and SIMS techniques with higher lateral resolution. This part of the work, carried out in collaboration with academic and / or industrial partners, will make it possible to anticipate the characterization capabilities of future devices.

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Critical buried interfaces in imaging devices studied by novel hard X-ray photoelectron spectroscopy techniques

Département des Plateformes Technologiques (LETI)

Laboratoire Analyses de Surfaces et Interfaces

01-10-2020

SL-DRT-20-0750

orenault@cea.fr

Advanced nano characterization (.pdf)

The development of advanced generic technologies such as imagers or memories requires a fine understanding on the properties of critical interfaces. To this end, implementing cutting-edge nanocharacterisation methods and instrumentation is of utmost importance. Here, we address the implementation of a novel X-ray photoelectron spectroscopy technique employing hard X-rays (HAXPES: HArd X-ray Photoelectron Spectroscopy) delivered by a Chromium source in a new kind of photoemission spectrometer recently installed at the Minatec PlatForm For Nanocharacterization, CEA-Grenoble. With this technique, the probing depth of conventional photoelectron spectroscopy is enhanced by a factor of 3-5, enabling to get access to deeply buried interfaces localized 20-50 nm below the surface, which is a typical situation in devices. The thesis work is organized around two aspects : a first one deals with the chemical state analysis of critical buried interfaces in imager devices and other thecnologies developped at ST Microelectronics. The second aspect is focused on interface electronics and in-depth potential distribution, especially targetting the determination of valence band offsets.

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