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Technological challenges >> Emerging materials and processes for nanotechnologies and microelectronics
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Developement of relaxed pseudo-substrate based on InGaN porosified by electrochemical anodisation

Département des Plateformes Technologiques (LETI)

Laboratoire des Matériaux pour la photonique

01-03-2021

PsD-DRT-21-0035

carole.pernel@cea.fr

As part of the Carnot PIRLE project starting in early 2021, we are looking for a candidate for a post-doctoral position of 24 months (12 months renewable) with a specialty in material science. The project consists in developing a relaxed pseudo-substrate based on III-N materials for µLEDs applications, especially for emission in red wavelength. The work will focus on developing an InGaN-based epitaxy MOCVD growth process, on an innovative substrate based on electrochemically anodized and relaxed materials. He (She) will have characterize both the level of relaxation of the re-epitaxied layer and its crystalline quality. These two points will promote the epitaxial regrowth of an effective red LED. The candidate will be part of the team, working on the PIRLE project, will be associated to the work on red LED growth and its optical and electro-optical characterizations.

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